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Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100)

机译:Si(100)上自组装硅化铂纳米线的结构和电子性能

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We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunnelling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt_2Si structure are formed along the step edges of Si(100). Pt-induced c(4 X 2) reconstructions also appear adjacent to the tetragonal Pt_2Si nanowires. Formation of the Pt_2Si nanowires is attributed to the anisotropic lattice mismatches between the tetragonal Pt_2Si structure and Si(100). Scanning tunnelling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy.
机译:我们研究了使用扫描隧道显微镜和高分辨率光发射光谱法在Si(100)表面上形成Pt硅化物纳米线的过程。沿着Si(100)的台阶边缘形成具有四方Pt_2Si结构的Pt硅化物纳米线。 Pt诱导的c(4 X 2)重建也出现在四边形Pt_2Si纳米线附近。 Pt_2Si纳米线的形成归因于四方Pt_2Si结构与Si(100)之间的各向异性晶格失配。扫描隧道光谱数据表明,纳米线是金属的。硅化铂的化学计量通过高分辨率光发射光谱法确认。

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