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Atomic contrast on a point defect on CaF2(111) imaged by non-contact atomic force microscopy

机译:非接触原子力显微镜在CaF2(111)点缺陷上的原子对比

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A point defect on a cleaved CaF2( 111) surface is imaged by non-contact atomic force microscopy in ultrahigh vacuum at room temperature to identify the nature of the point defect. First, atomic contrast formation on the point defect is examined using a negatively and a positively charged tip ( i. e. F-- and Ca2+- terminated tips), which are prepared by modifying a Si tip with a CaF2 cluster. Analysis of the two types of atomic contrast imaged by the F-- and Ca2+- terminated tips reveals that the point defect has a positive charge and the positive charge is located on a Ca2+ sublattice. Second, the lateral mobility of the point defect is investigated. We repeated imaging on the point defect by decreasing the tip - sample distance. At the smaller tip - sample distance, the point defect moved laterally to one of six neighbouring sites of the defect when the tip scanned the surface across the point defect. Taking into account ( i) the atomic contrast on the point defect by the charged tips with a known terminating ion ( i. e. F- or Ca2+) and ( ii) the lateral mobility of the point defect, we find a probable simple model of the point defect among six possible candidates.
机译:裂解的CaF2(111)表面的点缺陷是通过非接触原子力显微镜在室温下于超高真空下成像的,以识别该点缺陷的性质。首先,使用带负电和带正电的尖端(即F-和Ca2 +端接的尖端)检查在点缺陷上形成的原子对比,该尖端是通过用CaF2团簇修饰Si尖端而制备的。对由F--和Ca2 +终止的末端成像的两种原子对比成像的分析表明,该点缺陷具有正电荷,而正电荷位于Ca2 +子晶格上。其次,研究了点缺陷的横向迁移率。我们通过减少尖端-样本距离对点缺陷重复成像。在较小的尖端-采样距离处,当尖端扫描穿过点缺陷的表面时,点缺陷横向移动到缺陷的六个相邻位置之一。考虑到(i)带已知末端离子(即F-或Ca2 +)的带电尖端在点缺陷上的原子对比,以及(ii)点缺陷的横向迁移率,我们找到了点的简单模型在六个可能的候选人中存在缺陷。

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