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Quantum dots by ultraviolet and x-ray lithography

机译:紫外线和X射线光刻的量子点

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摘要

Highly luminescent semiconductor quantum dots have been synthesized in porous materials with ultraviolet and x-ray lithography. For this, the pore-filling solvent of silica hydrogels is exchanged with an aqueous solution of a group II metal ion together with a chalcogenide precursor such as 2-mercaptoethanol, thioacetamide or selenourea. The chalcogenide precursor is photodissociated in the exposed regions, yielding metal chalcogenide nanoparticles. Patterns are obtained by using masks appropriate to the type of radiation employed. The mean size of the quantum dots is controlled by adding capping agents such as citrate or thioglycerol to the precursor solution, and the quantum yield of the composites can be increased to up to about 30+ACU- by photoactivation. Our technique is water-based, uses readily available reagents, and highly luminescent patterned composites are obtained in a few simple processing steps. Polydispersity, however, is high (around 50+ACU-), preventing large-scale usage of the technique for the time being. Future developments that aim at a reduction of the polydispersity are presented.
机译:已经利用紫外线和X射线光刻法在多孔材料中合成了高发光半导体量子点。为此,将二氧化硅水凝胶的填孔溶剂与II族金属离子的水溶液以及硫属化物前体例如2-巯基乙醇,硫代乙酰胺或硒脲交换。硫属化物前体在暴露的区域中光解离,产生金属硫属化物纳米颗粒。通过使用适合于所用辐射类型的掩模来获得图案。通过向前体溶液中添加封端剂(例如柠檬酸盐或硫代甘油)来控制量子点的平均大小,并且通过光活化可以将复合材料的量子产率提高至约30 + ACU-。我们的技术是水基的,使用现成的试剂,并且通过几个简单的处理步骤即可获得高发光度的图案化复合材料。然而,多分散性很高(约50 + ACU-),暂时阻止了该技术的大规模使用。提出了旨在降低多分散性的未来发展。

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