Finely controlling quantum dots on GaAs surface patterned by removing oxide dots formed in atomic-force microscope lithography

摘要

On a GaAs surface, atomic force microscope lithography isrnused to fabricate nanometer oxide dots. When the oxide dots are suitablyrndetached from the substrate, holes of the same size are formed. Byrnovergrowing InGaAs on such a hole-patterned surface, one singlernquantum dot, whose size depends on the hole and can be as small as 20rnnm in diameter, is formed on the site of each hole. This technique isrnuseful to construct quantum dot arrays as solid-state qubit structures forrnquantum computing since differently sized quantum dots can bernsimultaneously fabricated.