Fabrication of quantum point contacts and quantum dots by imprint lithography

摘要

We demonstrate the integration of imprint lithography into nanoelectronic device fabrication. Th gates of quantum point contacts and quantum dots were patterned by imprint lithography. A Si mold with the gate pattern is embossed into a PMMA film located on top of the GaAs/AIGaAs heterostructure. The Schottky gates are fabricated by metal evaporation and lift-off.