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A model calculation of the tip field distribution for a carbon nanotube array and the optimum intertube distance

机译:碳纳米管阵列的尖端场分布和最佳管间距离的模型计算

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摘要

In a previous paper, the model of a floating top segment was proposed and used successfully to calculate the field enhancement factor as well as the field distribution on the top surface for a single carbon nanotube (CNT). In this paper, the model is extended to a CNT array. A set of modified linear charge equations has been derived for the CNT array using an approximation of multipole potential expansion. Fictitious charges inside a specific segment can be solved from these equations to calculate the field around the tips. Some numerical calculations of the field enhancement factor have been carried out, quantitatively accounting for the reduction of the factor with decreasing intertube distance. The relative field strength distribution on the top hemisphere of a CNT array is calculated too; it is observed to be close to that of a single CNT. Using the Fowler-Nordheim formula, the field emission intensity of a CNT array is maximized with varying intertube distance. The resulting optimum intertube distance to height ratio decreases gradually with increasing height to radius ratio, and is close to 2 only for height to radius ratio around 3 x 10(2).
机译:在以前的论文中,提出了一个浮动顶部段的模型,并成功地用于计算单个碳纳米管(CNT)的场增强因子以及顶表面上的场分布。在本文中,该模型扩展到了CNT阵列。使用多极电势扩展的近似值,为CNT阵列导出了一组修改的线性电荷方程。可以根据这些方程式求解特定段内的虚拟电荷,以计算尖端周围的磁场。已经进行了一些场增强因子的数值计算,定量地解释了随着管间距离的减小该因子的减小。 CNT阵列的上半球的相对场强分布也可以计算出来。观察到它接近单个CNT。使用Fowler-Nordheim公式,随着管间距的变化,CNT阵列的场发射强度最大化。最终的最佳管间距离与高度之比随高度与半径之比的增加而逐渐减小,仅当高度与半径之比约为3 x 10(2)时才接近2。

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