首页> 外文会议>2013 IEEE 5th International Nanoelectronics Conference. >Ultra-low turn-on field and ultra-high field emission current density from pillar array design of carbon nanotubes with optimum R/H ratio
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Ultra-low turn-on field and ultra-high field emission current density from pillar array design of carbon nanotubes with optimum R/H ratio

机译:具有最佳R / H比的碳纳米管柱阵列设计的超低开启场和超高场发射电流密度

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摘要

It is reported that field emission can effectively enhanced for aligned carbon nanotubes (CNTs) as field emitters when the ratio of distance between neighboring nano-tubes to the height of each individual CNT is about 2. In this paper, we proposed pillar array design of CNTs to fulfill the optimum R/H ratio (the ratio between inter-pillar distance R and pillar height H) with high density of aligned CNTs by changing H while maintaining R at 100μm, respectively. From the obtained experimental results, ultra-low turn-on field at 0.81V/μm and the ultra-high field emission current density (1A/cm2 at 2.8 V/μm) were achieved at the optimum R/H ratio of 2 with the inter-pillar distance of 100μm.
机译:据报道,当相邻的纳米管之间的距离与每个单独的CNT的高度之比约为2时,可以将排列的碳纳米管(CNT)作为场发射器有效地增强场发射。通过改变H值同时保持R为100μm来实现高密度取向CNTs,以实现最佳的R / H比(柱间距离R与柱高H之比)的CNT。根据获得的实验结果,可以在最佳条件下获得0.81V /μm的超低导通场和2.8 V /μm的超高场发射电流密度(1A / cm 2 ) R / H比为2,柱间距离为100μm。

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