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DENSITY CONTROLLED CARBON NANOTUBE FIELD EMISSION SOURCE, PREPARATION METHOD THEREOF, AND DENSITY CONTROL METHOD OF CARBON NANOTUBE
DENSITY CONTROLLED CARBON NANOTUBE FIELD EMISSION SOURCE, PREPARATION METHOD THEREOF, AND DENSITY CONTROL METHOD OF CARBON NANOTUBE
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机译:密度控制的碳纳米管场发射源,其制备方法和密度控制方法
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摘要
A density controlled carbon nanotube field emission source, a preparation method thereof, and a density control method of carbon nanotube are provided to improve the structural stability by lowering the density of the carbon nano tube layer. A buffer layer(110) is formed on the top of the substrate(100). A catalyst layer(120) is formed on the top of the buffer layer. The buffer layer is formed of the chrome(Cr), the tantalum(Ta), and the titanium(Ti) or their alloy. The catalyst layer is formed of the nickel(Ni), the iron(Fe), and the cobalt(Co) or their alloy. The carbon nanotube is perpendicularly grown up on the catalyst layer using the direct current plasma assisted chemical vapor deposition under the hydrocarbon gas environment including the methane gas, the acetylene gas or the ethylene gas. The substrate including carbon nanotube is dipped in the carbon nanotube tip process solution in 5 to 10 minutes. The carbon nanotube tip process solution is removed from the carbon nanotube or the substrate.
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