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Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes

机译:通过控制碳纳米管的密度生长来改善碳纳米管场发射阵列的场发射特性

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摘要

The density distribution of CNTs is one of the crucial parameters determing the field-emission property of CNTs. To effectively control the density of CNTs, an inactive thin-film layer was deposited on a catalyst. The results showed that improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as a catalyst, the turn-on field could be decreased from 3.7 V/μm. to 2.2V/u.m and the field-emission current density increased from 2.6 x 10~(-8) A/cm~2 to 2.4 x 10~(-4) A/cm~2 when the applied field was 4 V/μm.
机译:碳纳米管的密度分布是决定碳纳米管场发射特性的关键参数之一。为了有效地控制CNT的密度,在催化剂上沉积了非活性薄膜层。结果表明,以催化剂层上的薄SiO层为前驱体可以获得更好的场发射性能。对于3.5 nm Fe和3.5 nm Fe上的3.5 nm Fe和3.5 nm SiO作为催化剂,导通场可以从3.7 V /μm减小。到2.2V / um,当施加的电场为4 V /μm时场发射电流密度从2.6 x 10〜(-8)A / cm〜2增加到2.4 x 10〜(-4)A / cm〜2 。

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