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Electrostatic nanolithography on PVP films for patterning metal nanocrystals and fullerenes

机译:在PVP膜上进行静电纳米光刻,以构图金属纳米晶体和富勒烯

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Nanometric trench patterns have been drawn on polyvinylpyrrolidone films coated on Si substrates, employing an atomic force microscope using a conducting tip under a bias of -12 V with respect to the substrate ground and a moderate writing speed of 0.5 mu m s(-1). The obtained trenches have been used as nanomolds to create line patterns filled with Au nanocrystals ( mean diameter, 3.5 nm). Importantly, scanning electron microscopy measurements showed that the region around the polymer trenches is subjected to an electric field stress from the tip. Thus the modified region was exploited in chemically adsorbing C-60, as shown by electrical force microscopy and Raman spectroscopy measurements. The utility of the method is demonstrated by measuring the I-V characteristics of a nanopattern of C-60.
机译:使用原子力显微镜,使用导电尖端在相对于基板地面的-12 V偏压下,以0.5微米s(-1)的适中写入速度,在涂覆在Si基板上的聚乙烯吡咯烷酮薄膜上绘制了纳米沟槽图案。所获得的沟槽已用作纳米模具,以创建填充有Au纳米晶体(平均直径为3.5 nm)的线条图案。重要的是,扫描电子显微镜测量表明,聚合物沟槽周围的区域受到来自尖端的电场应力。因此,如通过电力显微镜和拉曼光谱测量所显示的,修饰区域用于化学吸附的C-60。通过测量C-60纳米图案的I-V特性证明了该方法的实用性。

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