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Field emission from a composite structure consisting of vertically aligned single-walled carbon nanotubes and carbon nanocones

机译:由垂直排列的单壁碳纳米管和碳纳米锥组成的复合结构的场发射

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摘要

Vertically aligned single-walled carbon nanotubes (VA-SWCNTs) have been fabricated on carbon nanocones (CNCs) in a gravity-assisted chemical vapour deposition (CVD) process. The CNCs with nanoscale Co particles at the top were first grown on the Co/Si(100) substrate biased at 350 V in a plasma enhanced chemical vapour deposition process. The CNCs typically are similar to 200 nm in height, and their diameters are similar to 100 nm near the bottom and similar to 10 nm at the top. The nanoscale Co particles similar to 10 nm in diameter act as catalysts which favour the growth of VA-SWCNTs out of CNCs at 850 degrees C in the gravity-assisted CVD process. The average length and the growth time of VA-SWCNTs are similar to 150 nm and 1.5 min, equivalent to a growth rate of similar to 6 mu m h(-1). The diameters of VA-SWCNTs are estimated to be 1.2-2.1 nm. When VA-SWCNTs are fabricated on CNCs, the turn-on voltage is reduced from 3.9 to 0.7 V mu m(-1) and the emission current density at the electric field of 5 V mu m(-1) is enhanced by a factor of more than 200. The composite VA-SWCNT/CNC structure is potentially an excellent field emitter. The emission stability of the VA-SWCNT/CNC field emitter is discussed.
机译:垂直排列的单壁碳纳米管(VA-SWCNT)已通过重力辅助化学气相沉积(CVD)工艺在碳纳米锥(CNC)上制造。首先,在等离子增强化学气相沉积工艺中,在顶部偏压为350 V的Co / Si(100)基板上生长具有纳米级Co颗粒的CNC。 CNC的高度通常类似于200 nm,其直径在底部接近100 nm,在顶部近似10 nm。直径约10 nm的纳米级Co颗粒用作催化剂,有助于在重力辅助CVD工艺中VA-SWCNT在850摄氏度下从CNC中生长出来。 VA-SWCNTs的平均长度和生长时间分别类似于150 nm和1.5 min,相当于大约6μmh(-1)的生长速率。 VA-SWCNT的直径估计为1.2-2.1nm。当在CNC控制器上制造VA-SWCNT时,开启电压从3.9降低到0.7 Vμm(-1),并且在5 Vμm(-1)电场下的发射电流密度提高了一个因子。超过200个。复合VA-SWCNT / CNC结构可能是出色的场发射器。讨论了VA-SWCNT / CNC场发射器的发射稳定性。

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