Spectral Control of Secondary Ion Photoeffect:a Way to Optoionics?

摘要

The possibility of optical control over the secondary ion yield from a photoconducting target is demonstrated; using it, one can both increase and decrease this yield. The sign of the secondary ion photoef fect (SIP) is determined by the energy position of each element in the target, which represents a limited solid solution of lead sulfide and cadmium sulfide prepared by thermal deposition in vacuum with subsequent annealing. In addition, the sign of the effect depends on the intensity and spectral composition of illuminat ing light. The possibility of changing the SIP sign is confirmed by theoretical calculations of the isoenergetic secondary ion spectrum and by the experimental results for lead ions. It is established that the SIP sign is determined by the competition between the compensation and recombination mechanisms. Recombination is accompanied by photoluminescence in both the near and middleIR range. The spectral optical control of the secondary ion yield offers new opportunities for creating nanometerthick materials and makes the gal vanic decoupling of the control and technology chains possible, thus paving the way for optoionics.