Single Electronic Traps in Tin and Zinc Oxides

摘要

The properties of single electronic traps in nanoparticles of tin and zinc oxides have been determined. These traps are responsible for the change in the concentration of electrons in the conduction band of gas sensors based on nanostructured films of tin and zinc oxides. Positions of the energy levels and characteristic times of the depletion for electronic traps formed by oxygen vacancies in zinc oxide and oxygen atoms adsorbed on the tin oxide have been established.