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Neutral and charged multi-exction complexes in single InAs quantum dots grown on InP(001)

机译:在InP(001)上生长的单个InAs量子点中的中性和带电多作用复合物

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摘要

Low density InAs/InP(001) quantum dots, formed by the ripening of self-organized quantum sticks, are subjected to optical spectroscopy by photoluminescence and micro-photoluminescence. The presence of neutral multi-exciton states in single quantum dots is observed up to the 4X state. The large energy spacing between the s- and p-shells (90 meV) reveals the strong spatial confinement of carriers in such InAs/InP quantum dots. Micro-photoluminescence studies show that some dots are charged which allows us to measure the exchange energies in the InAs/InP quantum dots.
机译:通过自发光量子棒的成熟形成的低密度InAs / InP(001)量子点通过光致发光和微光致发光进行光谱分析。观察到单个量子点中存在中性多激子态,直至4X态。 s壳和p壳之间的大能量间隔(90 meV)揭示了此类InAs / InP量子点中载流子的强空间限制。微光致发光研究表明,某些点带电,这使我们能够测量InAs / InP量子点中的交换能。

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