Electrical properties of individual ZnO nanowires

摘要

The electrical properties of individual ZnO nanowires were investigated for two methods of fabricating nanowire–electrode junctions. The number of carriers in the nanowires was increased by electrostatically doping them by applying a gate voltage. The nanowires were chemically doped by introducing impurities during growth. The Ga-doped nanowires had a linear current–voltage relationship over a wide voltage region. The nanowire–electrode junctions were formed either by using lithography to form electrodes on the nanowire or by using an AFM probe to move a nanowire onto prepared electrodes. With both methods, electrodes made of Ga-doped ZnO were found to make better electrical contact with the nanowire than those made of Ti/Au.