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Synthesis and electrical property measurements of individual layered transition metal dichalcogenide nanotubes and nanowires.

机译:单个分层过渡金属二卤化碳纳米管和纳米线的合成和电性能测量。

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摘要

Nanotubes of the layered transition metal dichalcogenides (LTMDs) including MoS2, WS2, ReS2, and ReSe 2 have been synthesized. Additionally, nanowires of WS2 have been synthesized. All of the 1-dimensional structures synthesized used some form of a template to structurally direct 1-dimensional growth. The synthesis of the nanotubes of MoS2, WS2, and ReS2 utilized the pores of anodic aluminum oxide membranes to direct nanotube growth. WS 2 nanowires were grown with the assistance of the surfactant cetyltrimethylammonium bromide. ReSe2 nanotubes were synthesized by using Se nanotubes as a sacrificial template.;The nanotubes and nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Information about the shape, identity, and nanostructure was gained utilizing these techniques.;Electron beam lithography was used to make electrical contacts to the nanowires. Once the contacts were made, two point room temperature current voltage curves were recorded for MoS2, ReS2, and ReSe 2 nanotubes. The current voltage characteristics displayed I-V curves that were nearly linear, nearly symmetric, and nearly rectifying for these systems. The currents passed through these nanotubes ranged from nanoamperes to microamperes. Additional experiments on ReSe2 nanotubes indicated a change in resistance with exposure to ammonia and photocurrent generation when exposed to light.
机译:合成了包括MoS2,WS2,ReS2和ReSe 2的层状过渡金属二卤化物(LTMD)的纳米管。另外,已经合成了WS2的纳米线。合成的所有一维结构都使用某种形式的模板在结构上指导一维生长。 MoS2,WS2和ReS2的纳米管的合成利用了阳极氧化铝膜的孔来指导纳米管的生长。 WS 2纳米线在表面活性剂十六烷基三甲基溴化铵的帮助下生长。以Se纳米管为牺牲模板合成了ReSe2纳米管。通过扫描电子显微镜(SEM),透射电子显微镜(TEM),能量色散谱(EDS)和X射线衍射(XRD)表征了纳米管和纳米线。 。利用这些技术可以获得有关形状,特性和纳米结构的信息。电子束光刻技术用于与纳米线进行电接触。一旦建立接触,就记录了MoS2,ReS2和ReSe 2纳米管的两点室温电流电压曲线。对于这些系统,当前的电压特性显示出的I-V曲线几乎是线性的,几乎是对称的并且几乎是整流的。通过这些纳米管的电流范围从纳安到微安。在ReSe2纳米管上进行的其他实验表明,暴露于氨气时电阻会发生变化,而暴露于光时会产生光电流。

著录项

  • 作者

    Seley, David B.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Chemistry Analytical.;Chemistry Inorganic.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 149 p.
  • 总页数 149
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;无机化学;
  • 关键词

  • 入库时间 2022-08-17 11:39:07

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