Room Temperature Layer-by-Layer Growth of InAlN Films on Lattice-matched ZnO Substrates

摘要

We have successfully grown In_xAl_(1-x)N films on nearly lattice matched ZnO (0001) substrates at room temperature (RT) by the use of pulsed laser deposition (PLD). We have found that reduction in growth temperature down to RT leads to suppression of the interfacial reactions between InAIN and ZnO and the layer-by-layer growth of InAIN.