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机译:
Univ Southampton, Sch Elect & Comp Sci, Nano Grp, Southampton SO17 1BJ, Hants, England;
机译:A Comprehensive Study of the Resistive Switching Mechanism in $hbox{Al/TiO}_{x}/hbox{TiO}_{2}/hbox{Al}$-Structured RRAM
机译:Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering
机译:Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM
机译:区域高效的嵌入式RRAM宏,使用逻辑处理寄生BJT-Switch(0T1R)单元和无读干扰温度感知电流模式读取方案的区域 - 5NS随机读取 - 访问时间
机译:有机溶剂订购Ras晶体中的Dynamic Switch II
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。