Nanometer Scale Modifications of Si/SiO_2 and Si/SiO_2/ Polymer Surfaces by Scanning Tunneling Microscope

摘要

The article presents the results of STM investigations of the Si-SiO_2 and Si-SiO_2-polymer systems in air. Depending on the scanning parameters, such as the voltage applied and tunneling current, a modification of the Si-SiO_2 surface was observed during these experiments. The possibility of the reversible modification was demonstrated. A thin polymer film was used to exclude the adsorption-desorption and electrochemical processes on the Si surface. The modification of the Si-SiO_2-polymer surface was observed at the scanning parameters similar to those for the modification of the Si-SiO_2 system. The electronic mechanism of the surface modification based on the tunneling of a charge through the oxide layer and its influence on the STM tunneling current is discussed.