Integration technique of high frequency bipolar circuits

摘要

An integration technique adapted for silicon bipolar technologywith full implantation and self-aligned base and emitter contacts ispresented. two high frequency circuits, a Gilbert cell and anamplifier with a bandwidth of 700 MHz that operate from a 2V supplyvoltage have been integrated. The circuits content only npntransistors with cutoff frequency between 1.4-16 GHz and BV_CBO> 15V.The amplifier circuit has an adjustable gain range of 1-0-40 dB (froma command voltage) for a large domain of supply voltages (2-16V).