Detection of deviations in semiconductor periodic structures by the finite-difference time-domain technique

摘要

The reflection of light from a semiconductor structure on a silicon wafer is analyzed with the finite-difference time-domain technique, with the structure gradually modified for typical defect categories. The effect of these changes on the near and far fields of the reflected light is determined, including the behavior over a continuous range. These results can be useful in designing advanced inspection instruments capable of high accuracy. More complex changes to the original structure are also studied to the same end.