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Finite element modelling for the investigation of edge effect in acoustic micro imaging of microelectronic packages

机译:微电子封装声学显微成像中边缘效应研究的有限元建模

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摘要

In acoustic micro imaging of microelectronic packages, edge effect is often presented as artifacts of C-scan images, which may potentially obscure the detection of defects such as cracks and voids in the solder joints. The cause of edge effect is debatable. In this paper, a 2D finite element model is developed on the basis of acoustic micro imaging of a flip-chip package using a 230 MHz focused transducer to investigate acoustic propagation inside the package in attempt to elucidate the fundamental mechanism that causes the edge effect. A virtual transducer is designed in the finite element model to reduce the coupling fluid domain, and its performance is characterised against the physical transducer specification. The numerical results showed that the under bump metallization (UBM) structure inside the package has a significant impact on the edge effect. Simulated wavefields also showed that the edge effect is mainly attributed to the horizontal scatter, which is observed in the interface of silicon die-to-the outer radius of solder bump. The horizontal scatter occurs even for a flip-chip package without the UBM structure.
机译:在微电子封装的声学微成像中,边缘效应通常表现为C扫描图像的伪影,这可能会掩盖诸如焊缝中的裂纹和空隙之类的缺陷的检测。边缘效应的原因值得商bat。在本文中,在倒装芯片封装的声学显微成像的基础上,使用230 MHz聚焦换能器开发了二维有限元模型,以研究封装内部的声传播,试图阐明引起边缘效应的基本机理。在有限元模型中设计了一个虚拟换能器,以减少耦合流体域,并且根据物理换能器规格来表征其性能。数值结果表明,封装内部的凸点下金属化(UBM)结构对边缘效应具有重大影响。模拟波场还表明,边缘效应主要归因于水平散射,这是在硅芯片到焊料凸点外半径的界面中观察到的。即使对于没有UBM结构的倒装芯片封装,也会发生水平散射。

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