Growth of AlInN films via elemental layers annealing at different temperatures

摘要

This work investigates the growth of AlInN films on Si (100) substrates through the annealing of Al and InN stacking layers in the temperature range 200 degrees C to 800 degrees C. The Al/InN layers were prepared on Si (100) substrates using RF magnetron sputtering technique at 100 degrees C. The layers were annealed in a quartz tube furnace at 200 degrees C, 400 degrees C, 600 degrees C and 800 degrees C for six hours. Structural features of the films were examined through XRD whereas the surface morphology and composition of the films were studied through FESEM and EDS, respectively. The FESEM and EDS cross-sectional analyses of the films were also conducted to observe the mixing of Al/InN stacking layers. XRD patterns revealed the formation of polycrystalline AlInN films whereas the FESEM and EDS cross-sectional results indicated that the mixing of Al/InN stacked layers became more prominent with increase of the annealing temperature. Surface roughness of the films studied through AFM also exhibited an increasing trend with increase of the annealing temperature.