A theoretical investigation of the electrical properties of ZnMgO/ZnO heterojunction field effect transistor

摘要

In this paper, I have tried to analyze the electrical properties and the experimental data related to drain current-drain voltage of the Zn _(0.7)Mg_(0.3)O/ZnO/Zn_(0.7)Mg_(0.3)O heterojunction field effect transistor by use of Hoffman nonideal model theoretically. Also by use of different scattering mechanisms in two-dimensional electron gas structures, I have studied the electrical transport properties of this structure and most important effective parameters for controlling electron mobility in the range of 75 to 300 K have been studied theoretically.