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Curie temperature of 3d transition-metal-doped GaAs

机译:3d过渡金属掺杂GaAs的居里温度

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摘要

The Zener model of ferromagnetism predicts that higher values of Curie temperature (CT) can be achieved by materials containing greater doping concentrations and hole concentrations. However, the prediction value is significantly higher than those from experiments with high doping concentrations. This discrepancy is resolved by an improved theoretical prediction for CT of 3d transition-metal-doped GaAs. Cr-doping results in higher CT than the Mn-doped GaAs. Maximum CT of Ga _(1-x)Mn _xAs is 215 K with 13.9% doping concentration. Room temperature CT can be achieved by 11.3% Cr-doped GaAs. Maximum CT of Ga _(1-x)Cr _xAs can reach 514.4 K with 31.7% doping concentration.
机译:铁磁性的齐纳模型预测,通过包含更高的掺杂浓度和空穴浓度的材料,可以实现更高的居里温度(CT)值。但是,预测值明显高于来自高掺杂浓度实验的预测值。通过对3d过渡金属掺杂的GaAs的CT进行改进的理论预测,可以解决这种差异。 Cr掺杂导致的CT高于Mn掺杂的GaAs。 Ga _(1-x)Mn _xAs的最大CT为215 K,掺杂浓度为13.9%。室温CT可以通过11.3%的Cr掺杂GaAs实现。 Ga _(1-x)Cr _xAs的最大CT可以达到514.4 K,掺杂浓度为31.7%。

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