Temperature dependent small-signal model parameters analysis of AlGaAs/InGaAs pHEMTs in multilayer 3D MMIC technologye

摘要

Development of linear temperature dependent small-signal models for active devices is useful for circuit designers to predict the circuit performance incorporating the devices. It is especially the case for high power devices where tremendous heat is expected to be generated and the underlying physics of the device could be affected. This paper presents, for the first time, an automated direct equivalent circuit parameters (ECPs) extractions, covering temperature range from −25 to 125°C, carried out on AlGaAs/InGaAs pHEMTs before and after fabrication in multilayer CPW MMIC. Comparisons of pre- and post-multilayer-processed pHEMTs characteristics provide insights into the multilayer processing and their optimizations.