PUNCH-THROUGH CHARACTERISTICS OF AVALANCHE PHOTODIODES UNDER THE GEIGER MODE

摘要

A passive quench circuit is used to study the punch-through characters of avalanche photodiodes under the Geiger mode. The photocurrent-voltage curve indicated clearly the punch-through voltage while the dark current-voltage curve is insensitive to the punch-through. The experiments demonstrate different distributions of the carries. The dark carriers counts increase much faster than the photo-carriers counts due to the different collection efficiency. A proper selection of the bias can increase the signal-to-noise ratio (SNR) of the single photon detector.