A quantitative study on tunneling conductivity of a floating-gate MOSFET in terms of the oxide-layer width

摘要

We study quantitatively the variation of the electrical tunneling conductivity in an MOSFET with control gate and floating gate in terms of the oxide-layer width. This study is performed by defining a suitable parameter to evaluate the sensitivity of the above conductivity to the oxide-layer thickness. In addition, this sensitivity is expressed in terms of the electronic density of states.