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首页> 外文期刊>Microscopy and Analysis. Asia-Pacific >Electron backscatter diffraction analysis of non-conductive samples using in-situ charge compensation
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Electron backscatter diffraction analysis of non-conductive samples using in-situ charge compensation

机译:使用原位电荷补偿的非导电样品的电子背散射衍射分析

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摘要

Electron backscatter diffraction (EBSD) is a powerful technique for structural characterization of micro- or nanocrystalline samples in the scanning electron microscope (SEM). Reliable EBSD analysis of non-conductive samples has so far required the use of conductive coatings or variable pressure (VP) SEM. An in-situ charge compensation system provides improved EBSD analysis of nonconductive samples without the drawbacks of these conventional methods. Similar to VP-SEM, charge neutralisation is achieved by gas ionization, but at negligible loss of resolution due to a significantly reduced interaction volume of beam and backscattered electrons with gas particles.
机译:电子背散射衍射(EBSD)是一种用于在扫描电子显微镜(SEM)中对微晶或纳米晶样品进行结构表征的强大技术。迄今为止,非导电样品的可靠EBSD分析需要使用导电涂层或可变压力(VP)SEM。原位电荷补偿系统可改善非导电样品的EBSD分析,而不会带来这些常规方法的缺点。与VP-SEM相似,电荷中和通过气体电离实现,但是由于束流和背向散射电子与气体粒子的相互作用体积显着减少,因此分辨率损失可忽略不计。

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