A wideband BiCMOS thermal noise canceling low noise amplifier with temperature compensation

摘要

A BiCMOS wideband thermal noise canceling low noise amplifier is presented. This BiCMOS design can achieve significant power consumption reduction comparing to the pure CMOS implementation with the same topology. A novel temperature compensation biasing circuit is also proposed for this BiCMOS noise canceling LNA topology to achieve relatively temperature independent gain. Realized in Tower Jazz 0.18m SiGe technology, the measured S-21 of the proposed LNA is 17.8 dB with a -3dB bandwidth of 3.3 GHz at room temperature. The measured gain variation from -40 to+80 degrees C is within +/- 0.4 dB. The measured minimum noise figure at room temperature is 1.9 dB when matched to 50 . The chip consumes about 0.2 x 0.3 mm(2) area excluding pads and dissipates about 8 mA DC current from a single 1.8V supply. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2121-2125, 2015