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A Packaged Noise-Canceling High-Gain Wideband Low Noise Amplifier

机译:封装的降噪高增益宽带低噪声放大器

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摘要

This brief presents a bandwidth and gain enhancement technique for packaged single-ended wideband low noise amplifier (LNA) module for high-sensitivity receivers. Wide bandwidth, low noise figure (NF), and high power gain are achieved by using gate-source inductors assisted impedance matching, current reuse feed-forward noise cancellation technique, and integrated shunt peaking output buffer. Fabricated in UMC 65-nm CMOS technology, the proposed LNA packaged in quad-flat no-leads package module achieves a maximum power gain of 20.5 dB, NF of 2–2.5 dB, 3-dB bandwidth from 0.4 to 2.2 GHz, and third-order inter modulation intercept the point of −5 dBm while consuming 25 mA current (including buffer) from 1.2 V supply.
机译:本简介介绍了用于高灵敏度接收器的封装单端宽带低噪声放大器(LNA)模块的带宽和增益增强技术。通过使用栅源电感器辅助的阻抗匹配,电流重用前馈噪声消除技术以及集成的并联峰值输出缓冲器,可以实现宽带宽,低噪声系数(NF)和高功率增益。拟议中的LNA采用UMC 65 nm CMOS技术制造,采用四方扁平无引线封装模块进行封装,可实现20.5 dB的最大功率增益,2–2.5 dB的NF,0.4至2.2 GHz的3 dB带宽,以及第三阶互调截取−5 dBm的点,同时消耗来自1.2 V电源的25 mA电流(包括缓冲器)。

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