X-BAND LOW PHASE NOISE IN-PHASE AND OUT-OF-PHASE INJECTION-LOCKED PUSH-PUSH DRO

摘要

An X-band push-push dielectric resonator (DR) oscillator with injection locking capability has been developed. Two injection locking methods, i.e., the in-phase method and the out-of-phase method, are studied. It is found that the out-of-phase method has wider locking range and much less effects on fundamental suppression than that of the in-phase method. The oscillator generates an output power of 9.5 dBm at 12.4 GHz and has a fundamental suppression of 32.5 dBc. Despite using a high quality (Q) factor DR, wide locking range has been obtained. SiGe HBTs with good flicker noise performance were chosen for low phase noise design. The phase noise values of the free running oscillator are -104.4 dBc/Hz, -120.2 dBc/Hz, and -142.6 dBc/Hz at 10 kHz, 100 kHz, and 1 MHz offsets from the carrier frequency, respectively. The phase noise performance is superior or comparable to the reported designs.