THE DESIGN AND REALIZATION OF HIGH-EFFICIENCY POWER AMPLIFIER WITH DRAIN EFFICIENCY OVER 80% AT 3.5 GHz

摘要

This article presents the full design methodology and implementation of inverse Class-F power amplifier with a commercial high-power GaN HEMT. For a 3.48 GHz continuous wave signal, the measurement results show state-of-the-art power-added-efficiency (PAE) of 76.7%, drain efficiency of 81.1%, gain of 12.9 dB, and output power of 39.9 dBm. Within a bandwidth of 200 MHz, drain efficiency and output power are maintained above 60% and 38.5 dBm, respectively. With digital predistortion, it achieves -45 dBc of adjacent channel leakage ratio for a 2.5 MHz wideband signal with a peak-to-average power ratio of 8.9 dB, with an average PAE of 36.7%.