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LOW POWER CONCURRENT COMPACT DUAL-BAND RECEIVER FRONT-END USING 0.18-μm CMOS PROCESS

机译:采用0.18μmCMOS工艺的低功耗,紧凑型双频接收机前端

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摘要

A fully monolithic dual-band concurrent receiver front-end chip for IEEE 802.11a/b/g applications is presented using 0.18-μm CMOS 1P6M technology. This dual-band receiver front-end design uses sub-harmonic mixer and only one multi-modulus synthesizer. This low IF circuit design has the advantage of low-cost and low-power as comparing with the direct conversion architecture. For a 1.8 V power supply, the overall power consumptions is 66.1 mW. The overall receiver-chain noise figures are 2.8 dB and 4.3 dB; P1db are -28dBm and -27dBm at 2.45 GHz and 5.25 GHz, and voltage gain is 28.5 dB and 28.1 dB, respectively.
机译:使用0.18-μmCMOS 1P6M技术提出了一种用于IEEE 802.11a / b / g应用的全单片双频并发接收器前端芯片。这种双频带接收器前端设计使用次谐波混频器和仅一个多模合成器。与直接转换架构相比,这种低IF电路设计具有低成本和低功耗的优势。对于1.8 V电源,总功耗为66.1 mW。整个接收器链噪声系数分别为2.8 dB和4.3 dB; P1db在2.45 GHz和5.25 GHz时为-28dBm和-27dBm,电压增益分别为28.5 dB和28.1 dB。

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