FINITE ELEMENT ANALYSIS OF QUANTUM STATES IN LAYERED QUANTUM SEMICONDUCTOR STRUCTURES WITH BAND NONPARABOLICITY EFFECT

摘要

A simultaneous calculation of eigenstates in the layered quantum semiconductor structures using the finite element method was developed. We proposed the approximation to linearize the nonlinear eigenvalue problem due to nonparabolicity effect and found the application range for the approach. The finite element calculation results showed an excellent agreement with the published results obtained by other authors. In addition, our calculated results confirm that the effect of nonparabolicity on the transition energy shift is considerably large for higher subbands and should be taken into account in the simulation and design of light emitters based on layered quantum semiconductor structures.