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Luminescence Enhancement in Indirect Band-Gap Semiconductors With Quantum Confinement Structures.

机译：具有量子限制结构的间接带隙半导体的发光增强。

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Shiraki, Y.;
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年度 2000
页码 1-2
总页数 2
原文格式 PDF
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Meetings; Emission spectra; Semiconductor lasers; Quantum wells; Heterojunctions; Gallium phosphides; Band gaps; Component report; Foreign reports; Aluminum phosphides;

机译：会议;发射光谱;半导体激光器;量子阱;异质结;磷化镓;带隙;组件报告;外国报告;磷化铝;

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1. Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films [J] . Poulopoulos Panagiotis Applied Physics Letters . 2012,第21期

机译：磁性半导体EuS薄膜在强量子限制条件下的带隙调谐
2. Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films [J] . Panagiotis Poulopoulos, Bjoern Lewitz, Andreas Straub, Applied Physics Letters . 2012,第21期

机译：磁性半导体EuS薄膜在强量子限制条件下的带隙调谐
3. Photoluminescence quantum yields for atomically thin-layered ReS_2: Identification of indirect-bandgap semiconductors [J] . Mohamed Nur Baizura, Shinokita Keisuke, Wang Xiaofan, Applied Physics Letters . 2018,第12期

机译：原子薄层ReS_2的光致发光量子产率：间接带隙半导体的鉴定
4. Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model [C] . Vandenberghe William G., Soree Bart, Magnus Wim, 2011 International Conference on Simulation of Semiconductor Processes and Devices . 2011

机译：间接半导体中的场致量子约束：量子力学和改进的半经典模型
5. Photoluminescence of quantum-confined semiconductor structures. [D] . Mosor, Sorin. 2005

机译：量子受限半导体结构的光致发光。
6. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons phonons and excitons [O] . Artur Medvid, Pavels Onufrijevs, Alexander Mychko 2011

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7. Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films [O] . Panagiotis Poulopoulos, Björn Lewitz, Andreas Straub, 2012

机译：磁半导体EUS薄膜中的强量子监禁状态下的带隙调谐

Luminescence Enhancement in Indirect Band-Gap Semiconductors With Quantum Confinement Structures.

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