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首页> 外文期刊>Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe >Influence of process parameters on the substrate heating in direct current plasma magnetron sputtering deposition process
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Influence of process parameters on the substrate heating in direct current plasma magnetron sputtering deposition process

机译:直流等离子体磁控溅射沉积工艺中工艺参数对衬底加热的影响

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摘要

Purpose — The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are alsodiscussed. Design/methodology/approach — Deposition duration, sputtering power, working gas pressure, and substrate heater temperature on substrateheating in the direct current (DC) magnetron sputtering deposition process were investigated.
机译:目的—本文的目的是解决沉积工艺参数的影响。还讨论了基板加热机制。设计/方法/方法—研究了在直流(DC)磁控溅射沉积工艺中,沉积时间,溅射功率,工作气体压力和衬底加热器温度对衬底加热的影响。

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