A porous silicon (PS) surface micromachining technology for suspended RF-MEMS device fabrication is proposed. Using PS as sacrificial layer and SiO{sub}2 film as support membrane, suspended metallic structure has been realized. The lateral size of the obtained suspended inductor is 450×425μm{sup}2. Sputtered aluminum with 1μm thickness is used as structural materials. To avoid any damage of the Al structure during the process, TMAH solution with Si powder and (NH{sub}4){sub}2S{sub}2O{sub}8 is used to remove the PS layer through etching holes.
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