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THE LITHOGRAPHY EXPERT: Diffusion and resolution

机译:光刻专家:扩散与分辨率

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摘要

The diffusion of chemical species during post-exposure bake is a necessary evil. Diffusion is often used to smooth out standing waves when printing on partially reflecting substrates. For a chemically amplified resist, acid must diffuse in order to find reactive sites on the polymer to deblock. It is the deblocking that changes the resist solubility, and the greater the amount of diffusion, the greater the amount of deblocking. But diffusion will also reduce resolution. Consider a diffusion length (the average distance that a particle will diffuse) that is greater than the feature size-all of the information of the feature will disappear as it smears itself out due to this diffusion. Of course, a good resist used properly will have a diffusion length much smaller than the desired feature size. But how much diffusion is too much? Since reducing diffusion reduces the amount of deblocking (and thus the sensitivity of the resist), we don't want to drive diffusion too low. In this column we'll derive some simple rules to quantitatively explain the impact of diffusion on resolution.
机译:暴露后烘烤期间化学物质的扩散是必不可少的。在部分反射的基材上进行打印时,通常使用扩散来消除驻波。对于化学放大的抗蚀剂,酸必须扩散,以便在聚合物上找到要解封的反应位点。是去粘剂改变了抗蚀剂的溶解度,并且扩散量越大,去粘剂的量就越大。但是扩散也会降低分辨率。考虑一个大于特征尺寸的扩散长度(粒子扩散的平均距离)-特征的所有信息在由于扩散而自身涂污时将消失。当然,正确使用的良好抗蚀剂的扩散长度将比所需特征尺寸小得多。但是多少扩散太多呢?由于减少扩散会减少解块的次数(从而减少抗蚀剂的灵敏度),因此我们不想将扩散驱动得过低。在本专栏中,我们将导出一些简单的规则,以定量地解释扩散对分辨率的影响。

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