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Nanoindentation Round Robin on Thin Film Copper on Silicon

机译:硅上铜薄膜上的纳米压痕循环

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摘要

Nanoindentation is used in a variety of fields to measure material hardness and elastic modulus. This test technique is especially attractive for thin films because of the difficulty conducting tensile or other conventional mechanical characterization tests on thin film specimens, and because it requires only a small surface area for testing. However, the standardization process for this new measurement method is still in progress. To test the ability of current measurement procedures to provide comparable results, a round robin was conducted. Invitations to participate were sent to over 100 laboratories. Two specimens, a copper film on a silicon substrate and an uncoated substrate, were distributed to each of 33 laboratories. The choice of measurement procedure was left to the performing organizations. By the end of the reporting period, 27 sets of results were received. While the average reported uncertainty (1 standard deviation) among the individual participants was 4 pct of the average hardness, the interlaboratory standard deviation of the hardness values was 15 pct. Similarly, the average reported uncertainty of the modulus was 5 pct of the average value, but the interlaboratory standard deviation of the modulus was 19 pct. None of the measurement variables examined in this round robin, including instrument type, analysis procedure, time since instrument calibration, chip mounting procedure, and tip condition, and neither of the potential covariant effects, chip location in the wafer and test date, were found to have a statistically significant effect on the reported hardness or modulus.
机译:纳米压痕用于各种领域,以测量材料的硬度和弹性模量。由于难以对薄膜样品进行拉伸或其他常规的机械表征测试,并且该方法仅需要很小的表面积进行测试,因此该测试技术对薄膜特别有吸引力。但是,这种新的测量方法的标准化过程仍在进行中。为了测试当前测量程序提供可比较结果的能力,进行了轮询。参加邀请被发送到100多个实验室。将两个样本(硅基板上的铜膜和未镀膜的基板)分配到33个实验室中的每个实验室。测量程序的选择留给执行机构。截至报告期末,已收到27套结果。个体参与者之间的平均报告的不确定性(1个标准偏差)是平均硬度的4 pct,而实验室间的硬度值的标准偏差是15 pct。同样,报告的模量的平均不确定性是平均值的5 pct,但是模间的实验室间标准偏差是19 pct。没有发现在此循环中检查的测量变量,包括仪器类型,分析程序,自仪器校准以来的时间,芯片安装程序和尖端条件,以及潜在的协变效应,晶片在芯片中的位置和测试日期均未发现。对报告的硬度或模量具有统计学上的显着影响。

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