Extrusion behavior of Cu filling in through-silicon-via (TSV) under thermal loading was investigated in this study. In order to suppress the extrusion of Cu-filled TSV, Cu-W was filled in a tapered TSV by electroplating. The Cu-filled TSV was used as a reference for comparison. Defect less filling of Cu-W in TSV was achieved at a composition 92.4 wt pct Cu and 7.6 wt pct W. The coefficients of thermal expansion of both Cu-7.6 pctW and Cu were 10.8 x 10(-6)/degrees C and 16.5 x 10(-6)/degrees C, respectively. Initially, both Cu and Cu-W filled TSVs were annealed for 30 minutes at 723 K (450 degrees C) and the extrusion heights were measured. The results showed that the extrusion of Cu-W filled was suppressed significantly compared to Cu-filled TSVs. The annealed extrusion heights of Cu and Cu-W were found to be 1.369 and 0.465 mu m, respectively. This showed around 34 pct lower extrusion height of Cu-W filled TSV as compared to Cu-filled TSV. The extrusion kinetics with different annealing durations and the mechanism of the suppression of extrusion in Cu-W filled TSV are also reported here. (C) The Minerals, Metals & Materials Society and ASM International 2015
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机译：在这项研究中研究了铜填充在硅通孔（TSV）中的热挤压行为。为了抑制Cu填充的TSV的挤出，通过电镀将Cu-W填充在锥形的TSV中。铜填充的硅通孔被用作比较的参考。在组成为92.4 wt％Cut和7.6 wt％wt的情况下，在TSV中实现了无缺陷的Cu-W填充。Cu-7.6pctW和Cu的热膨胀系数分别为10.8 x 10（-6）/℃和16.5。 x 10（-6）/摄氏度。最初，将Cu和Cu-W填充的TSV都在723 K（450摄氏度）下退火30分钟，然后测量挤出高度。结果表明，与填充Cu的TSV相比，填充Cu-W的挤出被显着抑制。发现Cu和Cu-W的退火挤出高度分别为1.369和0.465μm。这表明与Cu-填充的TSV相比，Cu-W填充的TSV的挤出高度降低了约34％。本文还报道了不同退火时间的挤压动力学以及Cu-W填充TSV中挤压抑制的机理。 （C）矿物，金属和材料学会和ASM International 2015
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