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Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

机译:热退火对用于环保型光伏应用的真空蒸发In2S3缓冲层物理性能的影响

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摘要

The present communication reports the effect of thermal annealing on the physical properties of In2S3 thin films for eco-friendly buffer layer photovoltaic applications. The thin films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing in air atmosphere within a low temperature range 150-450 degrees C. These as-deposited and annealed films were subjected to the X-ray diffraction (XRD), UV-vis spectrophotometer, current-voltage tests and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of as-deposited film is also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the as-deposited and annealed films ( <= 300 degrees C) have amorphous nature while films annealed at 450 degrees C show tetragonal phase of beta-In2S3 with preferred orientation (109) and polycrystalline in nature. The crystallographic parameters like lattice constant, inter-planner spacing, grain size, internal strain, dislocation density and number of crystallites per unit area are calculated for thermally annealed (450 degrees C) thin films. The optical band gap was found in the range 2.84-3.04 eV and observed to increase with annealing temperature. The current-voltage characteristics show that the asdeposited and annealed films exhibit linear ohmic behavior. The SEM studies show that the as-deposited and annealed films are uniform, homogeneous and free from crystal defects and voids. The grains in the thin films are similar in size and densely packed and observed to increase with thermal annealing. The experimental results reveal that the thermal annealing play significant role in the structural, optical, electrical and morphological properties of deposited In2S3 thin films and may be used as cadmium-free eco-friendly buffer layer for thin films solar cells applications. (C) 2015 Elsevier Ltd. All rights reserved.
机译:本交流报告了热退火对In2S3薄膜物理特性的影响,适用于环保的缓冲层光伏应用。使用热真空蒸发技术,将厚度为150 nm的薄膜沉积在玻璃和铟锡氧化物(ITO)涂覆的玻璃基板上,然后在150-450℃的低温范围内的空气气氛中进行后沉积热退火。分别对沉积和退火的薄膜进行X射线衍射(XRD),紫外可见分光光度计,电流电压测试和扫描电子显微镜(SEM)进行结构,光学,电学和表面形态分析。沉积膜的成分分析也使用能量色散光谱法(EDS)进行。 XRD图谱显示,沉积和退火后的薄膜(<= 300摄氏度)具有非晶态性质,而在450摄氏度下退火的薄膜表现出β-In2S3的四方晶相,具有较好的取向(109),并且具有多晶性质。对于热退火(450摄氏度)薄膜,计算了晶格常数,晶格间距,晶粒尺寸,内部应变,位错密度和每单位面积微晶数等晶体学参数。发现光学带隙在2.84-3.04eV的范围内,并且观察到其随着退火温度而增加。电流-电压特性表明,沉积和退火的薄膜表现出线性欧姆行为。 SEM研究表明,沉积和退火的薄膜是均匀,均质的,并且没有晶体缺陷和空隙。薄膜中的晶粒尺寸相似且紧密堆积,并观察到随着热退火而增加。实验结果表明,热退火在沉积的In2S3薄膜的结构,光学,电学和形态学特性中起着重要作用,可以用作薄膜太阳能电池应用中的无镉环保缓冲层。 (C)2015 Elsevier Ltd.保留所有权利。

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