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首页> 外文期刊>Materials science in semiconductor processing >Pure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope
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Pure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope

机译:纯和掺杂锆的锰(II,III)氧化物:在晶格相容性理论范围内的结构和导电相关特性的研究

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摘要

Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn] = 1%, 2% and 3% in addition to pure Mn3O4. Beyond classical characterization techniques, effects of Zr-doping were studied in reference to the expected use in rechargeable batteries and sensing devices. Moreover, additional opto-thermal investigation and analyses of the Lattice Compatibility Theory led to a founded understanding to the dynamics of Zirconium ion incorporation inside Mn3O4 host matrices. (C) 2015 Elsevier Ltd. All rights reserved.
机译:氧化锰(II,III)Mn3O4薄膜已使用简单的喷雾热解法沉积在玻璃基板上。锆掺杂协议被应用,以验证最近有人要求对菱锰矿物理性能的增强。除了纯Mn 3 O 4以外,还以[Zr] / [Mn] = 1%,2%和3%的比例实现了逐步掺杂。除经典的表征技术外,还参考可再充电电池和传感设备中的预期用途研究了Zr掺杂的影响。此外,对晶格相容性理论的其他光热研究和分析导致人们对Mn3O4主体基质中锆离子掺入动力学的认识已建立。 (C)2015 Elsevier Ltd.保留所有权利。

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