Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique

摘要

The present study is on the optoelectronic properties of isotype CdTe/c-Si heterojunction photodetector made by deposition of CdTe by pulsed laser deposition (PLD) technique on clean monocrystalline Si. Optical, electrical and structural properties of grown CdTe film were investigated. The optical data show that the optical band gap of CdTe was around 1.45 eV at 300 K. The CdTe/Si junction exhibits fair diode rectification and the soft breakdown occurred at VB>9 V. Dark and illuminated I–V characteristics of the CdTe/Si photodetector are examined at room temperature. The photodetector showed good photosensitivity in the visible and near-infrared regions with a value as high as 0.5A/W at 950 nm.