Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm-40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV-1.44 eV. Room temperature resistivity of the films is in the range of 16.0 ω cm-33.0 ω cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS0.9Se 0.1 have exhibited maximum output, a VOC of 0.74 V, J SC of 18.50 mA cm~(-2), ff of 0.75 and efficiency of 11.40% for 60 mW cm~(-2) illumination.
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机译：通过脉冲电镀技术以50％的占空比（15 s ON和15 s OFF）沉积具有不同组成的铜铟硫硒化物薄膜。 X射线衍射研究表明形成了单相黄铜矿铜铟硫硒化物薄膜。透射电子显微镜研究表明，随着硒含量的增加，晶粒尺寸从10nm到40nm增大。膜的带隙在0.95eV-1.44eV的范围内。膜的室温电阻率在16.0ωcm-33.0ωcm的范围内。在光电化学电池中使用的不同组成的膜已显示出光输出。组成为CuInS0.9Se 0.1的薄膜具有最大输出功率，0.74 V的VOC，J SC为18.50 mA cm〜（-2），ff为0.75和60 mW cm〜（-2）照明的效率为11.40％。
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