Field effect devices based on SrTiO3 gate dielectrics for the investigation of charge carrier mobility in macromolecular films

摘要

Field effect devices (FET) allow an exhaustive investigation of the electronic transport properties of innovative semiconductors of interest for new applications in modern electronics. In this contribution, we report on the fabrication and characterization of FET devices where SrTiO3 (STO) single crystals and organic macromolecular compounds, such as doped and undoped polythiophenes, or poly(N-vinylcarbazole) (PVK), are used as insulating and semiconducting layers, respectively. STO, with epsilon(r), of about 300, offers the possibility to strongly modulate the charge carrier density in the organic films, thus overcoming the limitations related to the use of more conventional oxides.