A supramolecular approach on using poly(fluorenylstyrene)-block-poly(2- vinylpyridine):PCBM composite thin films for non-volatile memory device applications

摘要

Supramolecular composite thin films of poly[4-(9,9-dihexylfloren-2-yl) styrene]-block -poly(2-vinylpyridine) (P(St-Fl)-b-P2VP):[6,6]-phenyl-C _(61)-butyric acid methyl ester (PCBM) were prepared for write-once-read-many times (WORM) non-volatile memory devices. The optical absorption and photoluminescence results indicated the formation of charge transfer complexation between the P2VP block and PCBM, which led to the varied PCBM aggregated size and memory characteristics. The ITO/PCBM:(P(St-Fl)-b-P2VP)/ Al device exhibited the WORM characteristic with low threshold voltage (-1.6 to -3.2 V) and high ON/OFF ratio (10~3 to 10~5) by tuning the PCBM content. The switching behavior could be explained by the charge injection dominated thermionic emission in the OFF state and field-induced charge transfer in the ON state. The present study provides a novel approach system for tuning polymer memory device characteristics through the supramolecular materials approach.