Ferroelectric polarization in poly(vinylidene fluoride-chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal

摘要

In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.