FERROELECTRIC THIN FILM, ITS PRODUCTION, SEMICONDUCTOR NON-VOLATILE MEMORY ELEMENT, FERROELECTRIC GATE-TYPE FET ELEMENT AND SENSOR

摘要

PURPOSE: To obtain a ferroelectric thin film having a composition of Pb₅Ge₃O₁₁ polarizing axis oriented thin film in a single grain state. a method producing the thin film and various semiconductor devices and sensors utilizing the ferroelectric thin film. ;CONSTITUTION: The objective ferroelectric thin film 14 has a composition of Pb₅Ge₃O₁₁ having three-fold symmetry in a symmetry of the surface and an area of ≤400μm² formed on a substrate 3 wherein the Pb₅Ge₃O₁₁ is a single grain and the polarizing axis is oriented in the vertical direction to the surface of the substrate 3.;COPYRIGHT: (C)1996,JPO