Hybrid Si-IGBT and SiC-SBD Modules

摘要

Fuji Electric has developed hybrid modules that combine silicon-insulated gate bipolar transistor (Si-IGBT) and silicon carbide-Schottky barrier diode (SiC-SBD) for high-efficiency inverter applications that contribute to energy savings. The SiC-SBD chip was developed jointly with the National Institute of Advanced Industrial Science and Technology, a public research institute, and the Si-IGBT chips are the latest 6th-generation "V-Series" IGBTs from Fuji Electric. The product lineup are 600 V class rated at 50/75/100 A, and 1,200 V class rated at 35/50 A. Inverter power loss in the 1,200 V 50 A class has been reduced by 23% compared to the V-series module.